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Category:Indian YouTubersThis invention relates to a high-pressure plasma-discharge system of the type utilized in sputter-etching of very shallow grooves and interstices in semiconductor materials, or in providing an etch mask for producing other kinds of shallow grooves or interstices. An example of the latter type of etch mask is one utilized in producing grooves for receiving therein elongated electrodes and thereby forming a part of a capacitor.
Plasma-discharge etching of silicon wafers and insulating layers on semiconductor wafers or other materials with a high-density, high-temperature, argon gas plasma source is well known. Typically, the plasma-discharge etching is effected in a reactive plasma-discharge chamber evacuated to a pressure of about 10.sup.-5 Torr or less, utilizing a high-frequency RF field in the range of from about 3.0 MHz to about 30.0 MHz.
The use of argon plasma etch chambers to etch semiconductor wafers with tight etch depths, as for example, about 0.001 to 0.010 microns, is of increasing interest to the semiconductor industry. This interest results partly because there is a well-recognized trend toward ever-smaller, and thus thinner, active layers in semiconductor materials.
One limiting factor in plasma-etching of very fine-groove patterns, such as narrow grooves about 0.001-0.010 microns deep and about 0.10 to 0.50 mm wide, with conventional plasma-etching systems is that the etch rate is low and the process is difficult to manage. A further problem in plasma-etching with the presence of narrow grooves, with intermediate depths and widths, is that they tend to become over etched when etched at the top edge, so that they become eroded excessively.
It is therefore an object of the present invention to provide an improved plasma etching system that is capable of providing the etching with extremely fine grooves.
It is another object of this invention to provide an improved plasma etching system that is capable of providing the etching with grooves of various heights and shapes.
It is yet another object of this invention to provide an improved plasma etching system that is capable of providing an etching process that is sufficiently fast, yet provides
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