Pink Floyd The Division Bell 320 Kbps Torrent |LINK| ⊳

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Pink Floyd – The Division Bell (1994) [FLAC] .
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Pink Floyd: Division Bell (1995) – music / album reviews, movie scores & game.1. Field of the Invention
The present invention relates to a method for manufacturing a semiconductor device, and, more particularly, to a method for forming a silicide film for a semiconductor device.
2. Description of the Related Art
For field effect transistors (FETs) used in an integrated circuit, the characteristics of the FETs are improved by using techniques for reducing parasitic resistance and parasitic capacitance. As a result of this improvement, the operating speed of the integrated circuit is increased. In general, a gate electrode of an FET is made of polycrystalline silicon (polysilicon), and a source and drain region is also made of polysilicon. In order to reduce the parasitic resistance, it has been attempted to use a metal silicide film which is a mixture of a metal and silicon. In addition, it has been proposed to use a so-called low-resistance silicide film, e.g. a silicide film in which cobalt (Co) or nickel (Ni) is used as a metal material, instead of the silicide film in which the metal and silicon are mixed. In general, the resistance of the low-resistance silicide film is several tenths of the resistance of the silicide film made of the mixture of the metal and silicon.
The low-resistance silicide film is formed at a low temperature, and is formed by a sputtering process which is performed in the atmosphere at room temperature.
If the sputtering process is performed at a low temperature, however, a polysilicon film which is a gate electrode of the FET has a defect. Thus, the FET may not operate normally. In addition, it has been proposed to perform the sputtering process in an atmosphere having the same argon concentration and the same
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